SI4505 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N/P-CH 30V/8V 6A 8SOIC
| Part | Technology | Drain to Source Voltage (Vdss) | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Configuration | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 8 V 30 V | 1.2 W | 3.8 A 6 A | Surface Mount | 18 mOhm | 1.8 V | N and P-Channel | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 8-SOIC | 20 nC |