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IRG4RC10UTRPBF
Discrete Semiconductor Products

FDD6672A

Obsolete
ON Semiconductor

MOSFET N-CH 30V 65A TO252

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IRG4RC10UTRPBF
Discrete Semiconductor Products

FDD6672A

Obsolete
ON Semiconductor

MOSFET N-CH 30V 65A TO252

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD6672A
Current - Continuous Drain (Id) @ 25°C65 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]46 nC
Input Capacitance (Ciss) (Max) @ Vds5070 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)70 W, 3.2 W
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 281$ 1.07
281$ 1.07

Description

General part information

FDD667 Series

N-Channel 30 V 65A (Ta) 3.2W (Ta), 70W (Tc) Surface Mount TO-252 (DPAK)

Documents

Technical documentation and resources