FDD667 Series

Catalog

MOSFET N-CH 30V 65A TO252

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor FDD6672A	65 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.2 W 70 W	TO-252AA	30 V	12 V	2 V	8 mOhm	46 nC	-55 °C	150 °C	N-Channel	5070 pF	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)
ON Semiconductor FDD6672A	65 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.2 W 70 W	TO-252 (DPAK)	30 V	12 V	2 V	8 mOhm	46 nC	-55 °C	150 °C	N-Channel	5070 pF	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)
ON Semiconductor FDD6670AL	84 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	83 W	TO-252 (DPAK)	30 V	20 V	3 V	5 mOhm	56 nC	-55 °C	175 ░C	N-Channel	3845 pF	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)
ON Semiconductor FDD6670AL	84 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	83 W	TO-252AA	30 V	20 V	3 V	5 mOhm	56 nC	-55 °C	175 ░C	N-Channel	3845 pF	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)