FDT458P
ActiveMOSFET TRANSISTOR, P CHANNEL, 3.4 A, -30 V, 0.105 OHM, -10 V, -1.8 V ROHS COMPLIANT: YES
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FDT458P
ActiveMOSFET TRANSISTOR, P CHANNEL, 3.4 A, -30 V, 0.105 OHM, -10 V, -1.8 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDT458P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 205 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 130 mOhm |
| Supplier Device Package | SOT-223-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.19 | |
| 10 | $ 0.75 | |||
| 100 | $ 0.49 | |||
| 500 | $ 0.38 | |||
| 1000 | $ 0.35 | |||
| 2000 | $ 0.32 | |||
| Digi-Reel® | 1 | $ 1.19 | ||
| 10 | $ 0.75 | |||
| 100 | $ 0.49 | |||
| 500 | $ 0.38 | |||
| 1000 | $ 0.35 | |||
| 2000 | $ 0.32 | |||
| Tape & Reel (TR) | 4000 | $ 0.29 | ||
| 8000 | $ 0.28 | |||
| 12000 | $ 0.26 | |||
| 28000 | $ 0.25 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.11 | |
| 10 | $ 0.65 | |||
| 25 | $ 0.59 | |||
| 50 | $ 0.53 | |||
| 100 | $ 0.46 | |||
| 250 | $ 0.42 | |||
| 500 | $ 0.38 | |||
| ON Semiconductor | N/A | 1 | $ 0.27 | |
Description
General part information
FDT458P Series
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.
Documents
Technical documentation and resources