Discrete Semiconductor Products

BUK751R6-30E,127

Obsolete

NXP USA Inc.

MOSFET N-CH 30V 120A TO220AB

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Discrete Semiconductor Products

BUK751R6-30E,127

Obsolete

NXP USA Inc.

MOSFET N-CH 30V 120A TO220AB

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Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK751R6-30E,127

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	154 nC
Input Capacitance (Ciss) (Max)	11960 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	349 W
Rds On (Max)	1.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

BUK75 Series

Part	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Grade	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	FET Type	Qualification	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Package Name	Rds On (Max)
NXP USA Inc. BUK754R7-60E,127	MOSFET (Metal Oxide)	82 nC	60 V	Through Hole	Automotive	6230 pF	10 V	4 V	N-Channel	AEC-Q101	TO-220-3	234 W	100 A	-55 °C	175 °C	20 V	TO-220AB	4.6 mOhm
NXP USA Inc. BUK7513-75B,127
NXP USA Inc. BUK75150-55A,127	MOSFET (Metal Oxide)	5.5 nC	55 V	Through Hole	Automotive	322 pF	10 V	4 V	N-Channel	AEC-Q101	TO-220-3	36 W	11 A	-55 °C	175 °C	20 V	TO-220AB	150 mOhm
NXP USA Inc. BUK7535-100A,127
NXP USA Inc. BUK7524-55A,127	MOSFET (Metal Oxide)		55 V	Through Hole	Automotive	1310 pF	10 V	4 V	N-Channel	AEC-Q101	TO-220-3	106 W	47 A	-55 °C	175 °C	20 V	TO-220AB	24 mOhm
NXP USA Inc. BUK752R7-30B,127	MOSFET (Metal Oxide)	91 nC	30 V	Through Hole	Automotive	6212 pF	10 V	4 V	N-Channel	AEC-Q101	TO-220-3	300 W	75 A	-55 °C	175 °C	20 V	TO-220AB	2.7 mOhm
NXP USA Inc. BUK753R1-40B,127	MOSFET (Metal Oxide)	94 nC	40 V	Through Hole	Automotive	6808 pF	10 V	4 V	N-Channel	AEC-Q101	TO-220-3	300 W	75 A	-55 °C	175 °C	20 V	TO-220AB	3.1 mOhm
NXP USA Inc. BUK7506-55B,127	MOSFET (Metal Oxide)	64 nC	55 V	Through Hole	Automotive	5100 pF	10 V	4 V	N-Channel	AEC-Q101	TO-220-3	254 W	75 A	-55 °C	175 °C	20 V	TO-220AB	6 mOhm 6 mOhm
NXP USA Inc. BUK751R6-30E,127	MOSFET (Metal Oxide)	154 nC	30 V	Through Hole		11960 pF	10 V	4 V	N-Channel		TO-220-3	349 W	120 A	-55 °C	175 °C	20 V	TO-220AB	1.6 mOhm
NXP USA Inc. BUK7528-100A,127

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	277	$ 2.61	1m+
	Tube	277	$ 1.32	1m+

CAD

3D models and CAD resources for this part

Description

General part information

BUK75 Series

N-Channel 30 V 120A (Tc) 349W (Tc) Through Hole TO-220AB

Documents

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No documents available