BUK75 Series
Manufacturer: NXP USA Inc.
Beta
⌘K
MOSFET N-CH 60V 100A TO220AB
| Part | Technology | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Grade | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) | FET Type | Qualification | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Package Name | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | MOSFET (Metal Oxide) | 82 nC | 60 V | Through Hole | Automotive | 6230 pF | 10 V | 4 V | N-Channel | AEC-Q101 | TO-220-3 | 234 W | 100 A | -55 °C | 175 °C | 20 V | TO-220AB | 4.6 mOhm |
NXP USA Inc. | ||||||||||||||||||
 NXP USA Inc. | MOSFET (Metal Oxide) | 5.5 nC | 55 V | Through Hole | Automotive | 322 pF | 10 V | 4 V | N-Channel | AEC-Q101 | TO-220-3 | 36 W | 11 A | -55 °C | 175 °C | 20 V | TO-220AB | 150 mOhm |
NXP USA Inc. | ||||||||||||||||||
NXP USA Inc. | MOSFET (Metal Oxide) | 55 V | Through Hole | Automotive | 1310 pF | 10 V | 4 V | N-Channel | AEC-Q101 | TO-220-3 | 106 W | 47 A | -55 °C | 175 °C | 20 V | TO-220AB | 24 mOhm | |
NXP USA Inc. | MOSFET (Metal Oxide) | 91 nC | 30 V | Through Hole | Automotive | 6212 pF | 10 V | 4 V | N-Channel | AEC-Q101 | TO-220-3 | 300 W | 75 A | -55 °C | 175 °C | 20 V | TO-220AB | 2.7 mOhm |
NXP USA Inc. | MOSFET (Metal Oxide) | 94 nC | 40 V | Through Hole | Automotive | 6808 pF | 10 V | 4 V | N-Channel | AEC-Q101 | TO-220-3 | 300 W | 75 A | -55 °C | 175 °C | 20 V | TO-220AB | 3.1 mOhm |
NXP USA Inc. | MOSFET (Metal Oxide) | 64 nC | 55 V | Through Hole | Automotive | 5100 pF | 10 V | 4 V | N-Channel | AEC-Q101 | TO-220-3 | 254 W | 75 A | -55 °C | 175 °C | 20 V | TO-220AB | 6 mOhm 6 mOhm |
NXP USA Inc. | MOSFET (Metal Oxide) | 154 nC | 30 V | Through Hole | 11960 pF | 10 V | 4 V | N-Channel | TO-220-3 | 349 W | 120 A | -55 °C | 175 °C | 20 V | TO-220AB | 1.6 mOhm | ||
NXP USA Inc. |