BUK75 Series

Manufacturer: Freescale Semiconductor - NXP

Catalog

MOSFET N-CH 75V 75A TO220AB

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Grade	Rds On (Max) @ Id, Vgs [Max]	Qualification
Freescale Semiconductor - NXP BUK7513-75B,127
Freescale Semiconductor - NXP BUK75150-55A,127	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V	150 mOhm	Through Hole	N-Channel	36 W	TO-220AB	322 pF	11 A	20 V	TO-220-3	5.5 nC	55 V
Freescale Semiconductor - NXP BUK7535-100A,127
Freescale Semiconductor - NXP BUK7524-55A,127	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V	24 mOhm	Through Hole	N-Channel	106 W	TO-220AB		47 A	20 V	TO-220-3		55 V	1310 pF
Freescale Semiconductor - NXP BUK752R7-30B,127	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V	2.7 mOhm	Through Hole	N-Channel		TO-220AB	6212 pF	75 A	20 V	TO-220-3		30 V		91 nC	300 W
Freescale Semiconductor - NXP BUK753R1-40B,127	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V		Through Hole	N-Channel		TO-220AB	6808 pF	75 A	20 V	TO-220-3		40 V			300 W	94 nC	Automotive	3.1 mOhm	AEC-Q101
Freescale Semiconductor - NXP BUK7506-55B,127	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V	6 mOhm	Through Hole	N-Channel	254 W	TO-220AB	5100 pF	75 A	20 V	TO-220-3	64 nC	55 V
Freescale Semiconductor - NXP BUK751R6-30E,127	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V	1.6 mOhm	Through Hole	N-Channel		TO-220AB	11960 pF	120 A	20 V	TO-220-3		30 V			349 W	154 nC
Freescale Semiconductor - NXP BUK7528-100A,127
Freescale Semiconductor - NXP BUK7504-40A,127	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 V	4.5 mOhm	Through Hole	N-Channel		TO-220AB	5730 pF	75 A	20 V	TO-220-3	117 nC	40 V			300 W