Specification	NXH006P120M3F2PTHG

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	191 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
FET Feature	Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs	622 nC
Input Capacitance (Ciss) (Max) @ Vds	11914 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	556 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	36-PIM (56.7x62.8)
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.4 V

NXH006P120M3F2PTHG Series

Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Part	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Configuration	FET Feature	Vgs(th) (Max) @ Id
ON Semiconductor NXH006P120M3F2PTHG	556 W	36-PIM (56.7x62.8)	Chassis Mount	191 A	8 mOhm	11914 pF	Silicon Carbide (SiC)	1200 V	1.2 kV	-40 C	175 °C	Module	622 nC	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	4.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 149.69
		20	$ 140.20
		40	$ 134.93
Newark	Each	1	$ 147.44
		5	$ 143.52
		10	$ 139.60
		40	$ 135.68
ON Semiconductor	N/A	1	$ 139.15

Description

General part information

NXH006P120M3F2PTHG Series

The NXH006P120M3F2PTHG is a power module containing 6 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.