NXH006P120M3F2PTHG Series

Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Catalog

Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Part	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Configuration	FET Feature	Vgs(th) (Max) @ Id
ON Semiconductor NXH006P120M3F2PTHG	556 W	36-PIM (56.7x62.8)	Chassis Mount	191 A	8 mOhm	11914 pF	Silicon Carbide (SiC)	1200 V	1.2 kV	-40 C	175 °C	Module	622 nC	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	4.4 V

Catalog

Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Key Features

• Excellent FOM [ = Rdson * Eoss ]

• 15V to 18V Gate Drive

• 6 mohm / 1200 V M3S SiC MOSFET Half−Bridge

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

Description

The NXH006P120M3F2PTHG is a power module containing 6 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.