Discrete Semiconductor Products

SIHU6N80E-GE3

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MOSFET N-CH 800V 5.4A IPAK

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Discrete Semiconductor Products

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MOSFET N-CH 800V 5.4A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHU6N80E-GE3

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	827 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251AB, TO-251-3 Long Leads
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	940 mOhm
Supplier Device Package	IPAK (TO-251)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHU6N80E-GE3	10 V	44 nC	800 V	-55 °C	150 °C	940 mOhm	5.4 A	78 W	MOSFET (Metal Oxide)	IPAK TO-251-3 Long Leads TO-251AB	827 pF	30 V	N-Channel	IPAK (TO-251)	Through Hole	4 V

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General part information

N-Channel 800 V 5.4A (Tc) 78W (Tc) Through Hole IPAK (TO-251)

Technical documentation and resources