SIHU6 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 800V 5.4A IPAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Type | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | 44 nC | 800 V | -55 °C | 150 °C | 940 mOhm | 5.4 A | 78 W | MOSFET (Metal Oxide) | IPAK TO-251-3 Long Leads TO-251AB | 827 pF | 30 V | N-Channel | IPAK (TO-251) | Through Hole | 4 V |