Discrete Semiconductor Products

GP3D030A065B

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SIC SCHOTTKY DIODES SIC SCHOTTKY DIODE 30A 650V TO-247-2

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Discrete Semiconductor Products

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SIC SCHOTTKY DIODES SIC SCHOTTKY DIODE 30A 650V TO-247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D030A065B

Capacitance @ Vr, F	1247 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	75 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.65 V

Part	Supplier Device Package	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Reverse Leakage @ Vr	Technology	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration
SemiQ GP3D030A065B	TO-247-2	Through Hole	1247 pF	0 ns	1.65 V	30 A	175 ░C	-55 °C	650 V	500 mA	75 µA	SiC (Silicon Carbide) Schottky	TO-247-2
SemiQ GP3D030A120U	TO-247-3	Through Hole		0 ns			175 ░C	-55 °C	1.2 kV	500 mA	30 µA	SiC (Silicon Carbide) Schottky	TO-247-3	15 A	1.6 V	1 Pair Common Cathode

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General part information

Diode 650 V 30A Through Hole TO-247-2

Technical documentation and resources