Discrete Semiconductor Products

NVMJS1D3N04CTWG

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TRANSISTOR MOSFET N-CH 40V 235A 8-PIN LFPAK T/R

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

NVMJS1D3N04CTWG

Active

ON Semiconductor

TRANSISTOR MOSFET N-CH 40V 235A 8-PIN LFPAK T/R

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DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NVMJS1D3N04CTWG

Current - Continuous Drain (Id) @ 25°C	235 A, 41 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	3.8 W, 128 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVMJS1D5N04CL Series

Power MOSFET 60 V, 1.36 mOhms, 250 A, Single N-Channel

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Vgs (Max)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]
ON Semiconductor NVMJS1D3N04CTWG	Surface Mount	41 A 235 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-LFPAK56 SOT-1205	N-Channel	20 V	Automotive	10 V	1.3 mOhm	AEC-Q101	40 V	65 nC	3.8 W 128 W	3.5 V	4300 pF	8-LFPAK
ON Semiconductor NVMJS1D4N06CLTWG	Surface Mount	39 A 262 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-LFPAK56 SOT-1205	N-Channel	20 V	Automotive	4.5 V 10 V	1.3 mOhm	AEC-Q101	60 V		4 W 180 W	2 V	7430 pF	8-LFPAK	103 nC
ON Semiconductor NVMJS1D5N04CLTWG	Surface Mount	38 A 200 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-LFPAK56 SOT-1205	N-Channel	20 V	Automotive	4.5 V 10 V	1.4 mOhm	AEC-Q101	40 V	70 nC		2 V	4300 pF	8-LFPAK
ON Semiconductor NVMJS1D6N06CLTWG	Surface Mount	38 A 250 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-LFPAK56 SOT-1205	N-Channel	20 V	Automotive	4.5 V 10 V	1.36 mOhm	AEC-Q101	60 V		3.8 W 167 W	2 V	6660 pF	8-LFPAK		91 nC
ON Semiconductor NVMJS1D0N04CTWG	Surface Mount	46 A 300 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-LFPAK56 SOT-1205	N-Channel	20 V	Automotive	10 V	0.92 mOhm	AEC-Q101	40 V	86 nC	3.9 W 166 W	3.5 V	6100 pF	8-LFPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.80
		10	$ 1.81
		100	$ 1.25
		500	$ 1.01
		1000	$ 0.93
	Digi-Reel®	1	$ 2.80
		10	$ 1.81
		100	$ 1.25
		500	$ 1.01
		1000	$ 0.93
	Tape & Reel (TR)	3000	$ 0.86
Newark	Each	2500	$ 0.93
		5000	$ 0.90

Description

General part information

NVMJS1D5N04CL Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.