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ONSEMI NTMJS1D5N04CLTWG
Discrete Semiconductor Products

NVMJS1D6N06CLTWG

Active
ON Semiconductor

MOSFET, AEC-Q101, N-CH, 60V, 250A, LFPAK ROHS COMPLIANT: YES

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ONSEMI NTMJS1D5N04CLTWG
Discrete Semiconductor Products

NVMJS1D6N06CLTWG

Active
ON Semiconductor

MOSFET, AEC-Q101, N-CH, 60V, 250A, LFPAK ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMJS1D6N06CLTWG
Current - Continuous Drain (Id) @ 25°C38 A, 250 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]91 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds6660 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-LFPAK56, SOT-1205
Power Dissipation (Max)3.8 W, 167 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.36 mOhm
Supplier Device Package8-LFPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.45
10$ 2.26
100$ 1.58
500$ 1.28
1000$ 1.19
Digi-Reel® 1$ 3.45
10$ 2.26
100$ 1.58
500$ 1.28
1000$ 1.19
Tape & Reel (TR) 3000$ 1.15
NewarkEach (Supplied on Cut Tape) 1$ 3.39
ON SemiconductorN/A 1$ 1.06

Description

General part information

NVMJS1D5N04CL Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.