Discrete Semiconductor Products

CSD19505KTTT

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80-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 3.1 MOHM

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Discrete Semiconductor Products

Active

80-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 3.1 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD19505KTTT

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	TO-263 (DDPAK-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Texas Instruments CSD19505KTTT	TO-263 (DDPAK-3)	3.2 V	MOSFET (Metal Oxide)	200 A	N-Channel	-55 °C	175 ░C	300 W	76 nC	80 V	20 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	3.1 mOhm	6 V 10 V	Surface Mount
Texas Instruments CSD19505KTT	TO-263 (DDPAK-3)	3.2 V	MOSFET (Metal Oxide)	200 A	N-Channel	-55 °C	175 ░C	300 W	76 nC	80 V	20 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	3.1 mOhm	6 V 10 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources