FERD20S100SB-TR
Active100 V, 20 A FIELD-EFFECT RECTIFIER DIODE (FERD)
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FERD20S100SB-TR
Active100 V, 20 A FIELD-EFFECT RECTIFIER DIODE (FERD)
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Technical Specifications
Parameters and characteristics for this part
| Specification | FERD20S100SB-TR |
|---|---|
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | DPAK |
| Technology | FERD (Field Effect Rectifier Diode) |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 780 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FERD20S100S Series
The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.
