Discrete Semiconductor Products

APT50GP60BG

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IGBT PT MOS 7 SINGLE 600 V 50 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

IGBT PT MOS 7 SINGLE 600 V 50 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT50GP60BG

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	190 A
Gate Charge	165 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	625 W
Supplier Device Package	TO-247 [B]
Switching Energy	637 µJ, 465 µJ
Td (on/off) @ 25°C	83 ns, 19 ns
Test Condition	5 Ohm, 400 V, 15 V, 50 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Configuration	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Input	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Cies) @ Vce	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Test Condition	Gate Charge	Switching Energy
Microchip Technology APT50GP60J	PT	600 V	Single	ISOTOP®	2.7 V	100 A	329 W	SOT-227-4 miniBLOC	500 çA	Standard	-55 °C	150 °C	Chassis Mount	5.7 nF
Microchip Technology APT50GP60BG	PT	600 V		TO-247 [B]	2.7 V	100 A	625 W	TO-247-3			-55 °C	150 °C	Through Hole		190 A	19 ns 83 ns	5 Ohm 15 V 50 A 400 V	165 nC	465 µJ 637 µJ
Microchip Technology APT50GP60JDQ2	PT	600 V	Single	ISOTOP®	2.7 V	100 A	329 W	SOT-227-4 miniBLOC	525 µA	Standard	-55 °C	150 °C	Chassis Mount	5.7 nF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 600 V 100 A 625 W Through Hole TO-247 [B]

Technical documentation and resources