Specification	FDU6N50TU

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.6 nC
Input Capacitance (Ciss) (Max) @ Vds	940 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDU6N50 Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK

Part	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDU6N50TU	Through Hole	500 V	10 V	5 V	IPAK TO-251-3 Short Leads TO-251AA	16.6 nC	IPAK	MOSFET (Metal Oxide)	N-Channel	940 pF	6 A	30 V	900 mOhm	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	671	$ 0.45

Description

General part information

FDU6N50 Series

UniFET™ MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalancheenergy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources

Package Drawing-369AR-DPAK3 (IPAK)

Package Drawing