FDU6N50 Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK

Part	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDU6N50TU	Through Hole	500 V	10 V	5 V	IPAK TO-251-3 Short Leads TO-251AA	16.6 nC	IPAK	MOSFET (Metal Oxide)	N-Channel	940 pF	6 A	30 V	900 mOhm	-55 °C	150 °C

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK

Key Features

• RDS(on)= 900 mΩ (Max.) @ VGS= 10 V, ID= 3 A

• Low Gate Charge (Typ. 12.8 nC)

• Low Crss(Typ. 9 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

Description

UniFET™ MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalancheenergy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.