Discrete Semiconductor Products

JANTXV1N3600

Active

DIODE 50V 200MA DO7

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE 50V 200MA DO7

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV1N3600

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-204AA, DO-7
Qualification	MIL-PRF-19500/231
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-7
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Qualification	Package / Case	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology
Microchip Technology JANTXV1N3600	Through Hole	200 mA	50 V	DO-7	175 ░C	-65 C	Military	1 V	Any Speed	200 mA	MIL-PRF-19500/231	Axial DO-204AA DO-7	4 ns	100 nA
Microchip Technology 1N3600	Through Hole	200 mA	50 V	DO-204AH (DO-35)	175 ░C	-65 C		1 V	Any Speed	200 mA		Axial DO-204AH DO-35	4 ns	100 nA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	193	$ 7.02

General part information

Diode 50 V 200mA Through Hole DO-7

Technical documentation and resources

No documents available