Discrete Semiconductor Products

JANTXV1N3600

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DIODE 50V 200MA DO7

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Discrete Semiconductor Products

Active

DIODE 50V 200MA DO7

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV1N3600

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage	100 nA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	DO-7, Axial, DO-204AA
Package Name	DO-7
Qualification	MIL-PRF-19500, 231
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Voltage - DC Reverse (Vr) (Max)	50 V
Voltage - Forward (Vf) (Max)	1 V

Part	Voltage - DC Reverse (Vr) (Max)	Package / Case	Voltage - Forward (Vf) (Max)	Grade	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Average Rectified (Io)	Current - Reverse Leakage	Qualification	Mounting Type	Reverse Recovery Time (trr)	Package Name	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Technology
Microchip Technology JANTXV1N3600	50 V	Axial DO-204AA DO-7	1 V	Military	175 °C	-65 °C	200 mA	100 nA	231 MIL-PRF-19500	Through Hole	4 ns	DO-7	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA
Microchip Technology 1N3600	50 V	Axial DO-204AH DO-35	1 V		175 °C	-65 °C	200 mA	100 nA		Through Hole	4 ns	DO-204AH (DO-35)	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	193	$ 7.02	1m+
	N/A	0	$ 7.02	1m+

3D models and CAD resources for this part

General part information

Diode 50 V 200mA Through Hole DO-7

Technical documentation and resources

No documents available