STD2805T4
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 5 A, 15 W, TO-252 (DPAK), SURFACE MOUNT
STD2805T4
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 5 A, 15 W, TO-252 (DPAK), SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | STD2805T4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 15 W |
| Supplier Device Package | DPAK |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD2805 Series
The device is manufactured in PNP Planar technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.Very low collector to emitter saturation voltageHigh current gain characteristicFast-switching speedSurface-mounting DPAK (TO-252) power package in tape& reel (suffix "T4)Through-hole IPAK (TO-251) power package in tube (suffix "-1")
Documents
Technical documentation and resources