Discrete Semiconductor Products

SCT015W120G3-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 15 MOHM TYP., 129 A IN AN HIP247-4 PACKAGE

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Discrete Semiconductor Products

SCT015W120G3-4AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 15 MOHM TYP., 129 A IN AN HIP247-4 PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT015W120G3-4AG

Current - Continuous Drain (Id) @ 25°C	129 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	167 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3512 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-4
Power Dissipation (Max)	673 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.2 V

SCT015W120G3-4AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
STMicroelectronics SCT015W120G3-4AG	673 W	3512 pF	200 °C	-55 ░C	TO-247-4	4.2 V	N-Channel	15 V 18 V	TO-247-4	17.5 mOhm	AEC-Q101	22 V	-10 V	1.2 kV	129 A	Automotive	167 nC	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	600	$ 40.82
Newark	Each	1	$ 61.63
		5	$ 60.52
		10	$ 59.35
		25	$ 58.77
		50	$ 58.20
		100	$ 55.92

Description

General part information

SCT015W120G3-4AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.