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1N4247US
Discrete Semiconductor Products

1N4247US

Active
Microchip Technology

UFR,FRR A-BODY SQ. MELF ROHS COMPLIANT: YES

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1N4247US
Discrete Semiconductor Products

1N4247US

Active
Microchip Technology

UFR,FRR A-BODY SQ. MELF ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N4247US
Current - Average Rectified (Io)1 A
Current - Reverse Leakage1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseSQ-MELF
Package NameMELF-1
Reverse Recovery Time (trr)5 µs
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 6.3830d+
Microchip DirectN/A 1$ 6.8730d+
NewarkEach 100$ 6.3830d+
500$ 6.14

CAD

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Description

General part information

1N4247US-Rectifier-Diode Series

This "standard recovery" rectifier diode series is military qualified to MIL-PRF-19500/286 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF package configurations are available by adding a "US" suffix (see separate data sheet for 1N5614US thru 1N5622US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both throughhole and surface mount packages.