Discrete Semiconductor Products

SI5410DU-T1-GE3

Obsolete

MOSFET N-CH 40V 12A PPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 12A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5410DU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	31 W, 3.1 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI5410DU-T1-GE3	3.1 W 31 W	40 V	32 nC	1350 pF	PowerPAK® ChipFET™ Single	12 A	PowerPAK® ChipFET™ Single	N-Channel	3 V	-55 °C	150 °C	Surface Mount	18 mOhm	20 V	MOSFET (Metal Oxide)	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Technical documentation and resources