SI5410 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 40V 12A PPAK
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.1 W 31 W | 40 V | 32 nC | 1350 pF | PowerPAK® ChipFET™ Single | 12 A | PowerPAK® ChipFET™ Single | N-Channel | 3 V | -55 °C | 150 °C | Surface Mount | 18 mOhm | 20 V | MOSFET (Metal Oxide) | 4.5 V 10 V |