Specification	NVH4L020N090SC1

Current - Continuous Drain (Id) @ 25°C	116 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	196 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4415 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	484 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-247-4L
Vgs(th) (Max) @ Id	4.3 V

NVH4L020N090SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Qualification
ON Semiconductor NVH4L020N090SC1	28 mOhm	4.3 V	196 nC	Automotive	4415 pF	TO-247-4	900 V	TO-247-4L	N-Channel	15 V 18 V	Through Hole	484 W	116 A	-55 °C	175 ░C	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 35.66
		10	$ 26.41
		100	$ 23.27
Newark	Each	1	$ 48.48
		5	$ 46.71
		10	$ 44.91
		25	$ 43.08
		50	$ 41.12
		100	$ 40.54
		250	$ 39.66
ON Semiconductor	N/A	1	$ 24.82

Description

General part information

NVH4L020N090SC1 Series

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.