NVH4L020N090SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Qualification
ON Semiconductor NVH4L020N090SC1	28 mOhm	4.3 V	196 nC	Automotive	4415 pF	TO-247-4	900 V	TO-247-4L	N-Channel	15 V 18 V	Through Hole	484 W	116 A	-55 °C	175 ░C	AEC-Q101

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L

Key Features

• High Junction Temperature

• 900V Rating

• 100% UIL Tested

• RoHS Compliant

• Qualified for Automotive According to AEC−Q101

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.