Integrated Circuits (ICs)

MT53E2G32D4DE-046 WT:A

Obsolete

Micron Technology Inc.

DRAM, MOBILE LPDDR4, 64 GBIT, 2G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS

Deep-Dive with AI

Search across all available documentation for this part.

Integrated Circuits (ICs)

MT53E2G32D4DE-046 WT:A

Obsolete

Micron Technology Inc.

DRAM, MOBILE LPDDR4, 64 GBIT, 2G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E2G32D4DE-046 WT:A

Access Time	3.5 ns
Clock Frequency	2.133 GHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	2 G
Memory Size	8 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-25 °C
Package / Case	200-TFBGA
Supplier Device Package	200-TFBGA (10x14.5)
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E2G32 Series

Part	Grade	Memory Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Voltage - Supply	Memory Size	Memory Format	Clock Frequency	Qualification	Memory Organization	Package / Case	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Access Time	Supplier Device Package	Memory Interface	Write Cycle Time - Word, Page
Micron Technology Inc. MT53E2G32D4DT-046 AAT:A	Automotive	Volatile	-40 °C	105 °C	SDRAM - Mobile LPDDR4	1.1 V	8 MB	DRAM	2.133 GHz	AEC-Q100	2 G
Micron Technology Inc. MT53E2G32D4DE-046 AIT:A TR	Automotive	Volatile	-40 °C	95 °C	SDRAM - Mobile LPDDR4X		8 MB	DRAM	2.133 GHz	AEC-Q100	2 G	200-TFBGA	Surface Mount	1.06 V	1.17 V	3.5 ns	200-TFBGA (10x14.5)	Parallel	18 ns
Micron Technology Inc. MT53E2G32D4DT-046 AIT:A TR	Automotive	Volatile	-40 °C	95 °C	SDRAM - Mobile LPDDR4	1.1 V	8 MB	DRAM	2.133 GHz	AEC-Q100	2 G
Micron Technology Inc. MT53E2G32D4DE-046 WT:C TR		Volatile	-25 °C	85 °C	SDRAM - Mobile LPDDR4X		8 MB	DRAM	2.133 GHz		2 G	200-TFBGA	Surface Mount	1.06 V	1.17 V	3.5 ns	200-TFBGA (10x14.5)	Parallel	18 ns
Micron Technology Inc. MT53E2G32D4DE-046 AAT:A TR	Automotive	Volatile	-40 °C	105 °C	SDRAM - Mobile LPDDR4X		8 MB	DRAM	2.133 GHz	AEC-Q100	2 G	200-TFBGA	Surface Mount	1.06 V	1.17 V	3.5 ns	200-TFBGA (10x14.5)	Parallel	18 ns
Micron Technology Inc. MT53E2G32D4DT-046 WT:A		Volatile	-30 °C	85 °C	SDRAM - Mobile LPDDR4	1.1 V	8 MB	DRAM	2.133 GHz		2 G
Micron Technology Inc. MT53E2G32D4DE-046 WT:A		Volatile	-25 °C	85 °C	SDRAM - Mobile LPDDR4X		8 MB	DRAM	2.133 GHz		2 G	200-TFBGA	Surface Mount	1.06 V	1.17 V	3.5 ns	200-TFBGA (10x14.5)	Parallel	18 ns
Micron Technology Inc. MT53E2G32D4DT-046 AAT:A TR	Automotive	Volatile	-40 °C	105 °C	SDRAM - Mobile LPDDR4	1.1 V	8 MB	DRAM	2.133 GHz	AEC-Q100	2 G
Micron Technology Inc. MT53E2G32D4DE-046 AIT:C TR	Automotive	Volatile	-40 °C	95 °C	SDRAM - Mobile LPDDR4X		8 MB	DRAM	2.133 GHz	AEC-Q100	2 G	200-TFBGA	Surface Mount	1.06 V	1.17 V	3.5 ns	200-TFBGA (10x14.5)	Parallel	18 ns
Micron Technology Inc. MT53E2G32D4DE-046 AAT:C	Automotive	Volatile	-40 °C	105 °C	SDRAM - Mobile LPDDR4X		8 MB	DRAM	2.133 GHz	AEC-Q100	2 G	200-TFBGA	Surface Mount	1.06 V	1.17 V	3.5 ns	200-TFBGA (10x14.5)	Parallel	18 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 40.71

Description

General part information

MT53E2G32 Series

SDRAM - Mobile LPDDR4X Memory IC 64Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available