MT53E2G32 Series
Manufacturer: Micron Technology Inc.
IC DRAM 64GBIT 2.133GHZ FBGA
| Part | Grade | Memory Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Voltage - Supply | Memory Size | Memory Format | Clock Frequency | Qualification | Memory Organization | Package / Case | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Access Time | Supplier Device Package | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 8 MB | DRAM | 2.133 GHz | AEC-Q100 | 2 G | ||||||||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 95 °C | SDRAM - Mobile LPDDR4X | 8 MB | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 200-TFBGA (10x14.5) | Parallel | 18 ns | |
Micron Technology Inc. | Automotive | Volatile | -40 °C | 95 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 8 MB | DRAM | 2.133 GHz | AEC-Q100 | 2 G | ||||||||
Micron Technology Inc. | Volatile | -25 °C | 85 °C | SDRAM - Mobile LPDDR4X | 8 MB | DRAM | 2.133 GHz | 2 G | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 200-TFBGA (10x14.5) | Parallel | 18 ns | |||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4X | 8 MB | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 200-TFBGA (10x14.5) | Parallel | 18 ns | |
Micron Technology Inc. | Volatile | -30 °C | 85 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 8 MB | DRAM | 2.133 GHz | 2 G | ||||||||||
Micron Technology Inc. | Volatile | -25 °C | 85 °C | SDRAM - Mobile LPDDR4X | 8 MB | DRAM | 2.133 GHz | 2 G | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 200-TFBGA (10x14.5) | Parallel | 18 ns | |||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 8 MB | DRAM | 2.133 GHz | AEC-Q100 | 2 G | ||||||||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 95 °C | SDRAM - Mobile LPDDR4X | 8 MB | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 200-TFBGA (10x14.5) | Parallel | 18 ns | |
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4X | 8 MB | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 200-TFBGA (10x14.5) | Parallel | 18 ns |