Discrete Semiconductor Products

KSE210STU

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSE210STU

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	45 hFE
Frequency - Transition	65 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	15 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max)	25 V

PNP Epitaxial Silicon Transistor

Part	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Power - Max [Max]	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Mounting Type
ON Semiconductor KSE210STU	TO-126-3 TO-225AA	TO-126-3	45 hFE	5 A	15 W	65 MHz	PNP	1.8 V	150 °C	25 V	100 nA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources