Catalog
PNP Epitaxial Silicon Transistor
Key Features
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product: fT= 65 MHz@IC= -100 mA (Min.)
• Complement to KSE200
Beta
⌘K
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
| Part | Package / Case | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Power - Max [Max] | Frequency - Transition | Transistor Type | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | TO-126-3 TO-225AA | TO-126-3 | 45 hFE | 5 A | 15 W | 65 MHz | PNP | 1.8 V | 150 °C | 25 V | 100 nA | Through Hole |