Discrete Semiconductor Products

SI4599DY-T1-GE3

Active

MOSFET N/P-CH 40V 6.8A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N/P-CH 40V 6.8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4599DY-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6.8 A, 5.8 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	3 W, 3.1 W
Rds On (Max) @ Id, Vgs	35.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Feature	Drain to Source Voltage (Vdss)	Mounting Type
Vishay General Semiconductor - Diodes Division SI4599DY-T1-GE3	8-SOIC	3.9 mm	0.154 in	8-SOIC	3 V	5.8 A 6.8 A	35.5 mOhm	-55 °C	150 °C	20 nC	N and P-Channel	3 W 3.1 W	640 pF	MOSFET (Metal Oxide)	Logic Level Gate	40 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SOIC

Technical documentation and resources