SI4599 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N/P-CH 40V 6.8A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Configuration | Power - Max | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Feature | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 3 V | 5.8 A 6.8 A | 35.5 mOhm | -55 °C | 150 °C | 20 nC | N and P-Channel | 3 W 3.1 W | 640 pF | MOSFET (Metal Oxide) | Logic Level Gate | 40 V | Surface Mount |