Discrete Semiconductor Products

SI4953ADY-T1-E3

Obsolete

MOSFET 2P-CH 30V 3.7A 8-SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 30V 3.7A 8-SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4953ADY-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Mounting Type	Surface Mount
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Configuration	FET Feature	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4953ADY-T1-GE3	30 V	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel	Logic Level Gate	1 V	8-SOIC	25 nC	8-SOIC	3.9 mm	0.154 in	3.7 A	1.1 W	53 mOhm
Vishay General Semiconductor - Diodes Division SI4953ADY-T1-E3	30 V	Surface Mount	MOSFET (Metal Oxide)	2 P-Channel	Logic Level Gate	1 V	8-SOIC	25 nC	8-SOIC	3.9 mm	0.154 in	3.7 A	1.1 W	53 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 3.7A 1.1W Surface Mount 8-SOIC

Technical documentation and resources

No documents available