SI4953 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 30V 3.7A 8-SOIC
| Part | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Configuration | FET Feature | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | Surface Mount | MOSFET (Metal Oxide) | 2 P-Channel | Logic Level Gate | 1 V | 8-SOIC | 25 nC | 8-SOIC | 3.9 mm | 0.154 in | 3.7 A | 1.1 W | 53 mOhm |
Vishay General Semiconductor - Diodes Division | 30 V | Surface Mount | MOSFET (Metal Oxide) | 2 P-Channel | Logic Level Gate | 1 V | 8-SOIC | 25 nC | 8-SOIC | 3.9 mm | 0.154 in | 3.7 A | 1.1 W | 53 mOhm |