Discrete Semiconductor Products

SIJA52ADP-T1-GE3

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MOSFET N-CH 40V 41.6A/131A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 40V 41.6A/131A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIJA52ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	41.6 A, 131 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	5500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	48 W, 4.8 W
Rds On (Max) @ Id, Vgs	1.63 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIJA52ADP-T1-GE3	5500 pF	100 nC	4.8 W 48 W	N-Channel	-55 °C	150 °C	PowerPAK® SO-8	2.4 V	40 V	41.6 A 131 A	PowerPAK® SO-8	MOSFET (Metal Oxide)	4.5 V 10 V	-16 V 20 V	1.63 mOhm	Surface Mount
Vishay General Semiconductor - Diodes Division SIJA52DP-T1-GE3	7150 pF		48 W	N-Channel	-55 °C	150 °C	PowerPAK® SO-8	2.4 V	40 V	60 A	PowerPAK® SO-8	MOSFET (Metal Oxide)	4.5 V 10 V	-16 V 20 V	1.7 mOhm	Surface Mount	150 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources