SIJA52 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Catalog
MOSFET N-CH 40V 41.6A/131A PPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5500 pF | 100 nC | 4.8 W 48 W | N-Channel | -55 °C | 150 °C | PowerPAK® SO-8 | 2.4 V | 40 V | 41.6 A 131 A | PowerPAK® SO-8 | MOSFET (Metal Oxide) | 4.5 V 10 V | -16 V 20 V | 1.63 mOhm | Surface Mount | |
Vishay General Semiconductor - Diodes Division | 7150 pF | 48 W | N-Channel | -55 °C | 150 °C | PowerPAK® SO-8 | 2.4 V | 40 V | 60 A | PowerPAK® SO-8 | MOSFET (Metal Oxide) | 4.5 V 10 V | -16 V 20 V | 1.7 mOhm | Surface Mount | 150 nC |