Discrete Semiconductor Products
SCTW35N65G2V
LTBSTMicroelectronics
SILICON CARBIDE POWER MOSFET 650 V, 55 MOHM TYP., 45 A IN AN HIP247 PACKAGE
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Discrete Semiconductor Products
SCTW35N65G2V
LTBSTMicroelectronics
SILICON CARBIDE POWER MOSFET 650 V, 55 MOHM TYP., 45 A IN AN HIP247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCTW35N65G2V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 18 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 20 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 240 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 67 mOhm |
| Supplier Device Package | HiP247™ |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCTW35N65G2V Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources