Discrete Semiconductor Products

MBR200100CT

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DIODE MOD SCHOT 100V 200A 2TOWER

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Discrete Semiconductor Products

Active

DIODE MOD SCHOT 100V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR200100CT

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Speed	500 ns, 200 mA
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	840 mV

Part	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io) (per Diode)	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Package / Case	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MBR200100CT	1 Pair Common Cathode	100 V	200 mA 500 ns	200 A	Chassis Mount	840 mV	Twin Tower	Twin Tower	Schottky	5 mA
GeneSiC Semiconductor MBR200100CTR	1 Pair Common Anode	100 V	200 mA 500 ns	200 A	Chassis Mount	840 mV	Twin Tower	Twin Tower	Schottky	5 mA
GeneSiC Semiconductor MBR200100CTS	2 Independent	100 V	200 mA 500 ns	200 A	Screw Mount		SOT-227	SOT-227-4	Schottky	10 µA	-40 °C	175 ░C	950 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 100 V 200A (DC) Chassis Mount Twin Tower

Technical documentation and resources