MBR200100 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOT 100V 200A 2TOWER
| Part | Diode Configuration | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Current - Average Rectified (Io) (per Diode) | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Supplier Device Package | Package / Case | Technology | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 Pair Common Cathode | 100 V | 200 mA 500 ns | 200 A | Chassis Mount | 840 mV | Twin Tower | Twin Tower | Schottky | 5 mA | |||
GeneSiC Semiconductor | 1 Pair Common Anode | 100 V | 200 mA 500 ns | 200 A | Chassis Mount | 840 mV | Twin Tower | Twin Tower | Schottky | 5 mA | |||
GeneSiC Semiconductor | 2 Independent | 100 V | 200 mA 500 ns | 200 A | Screw Mount | SOT-227 | SOT-227-4 | Schottky | 10 µA | -40 °C | 175 ░C | 950 mV |