Specification	MJ11032G

Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	300 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Vce Saturation (Max) @ Ib, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

MJ11032 Series

50 A, 120 V NPN Darlington Bipolar Power Transistor

Part	Current - Collector (Ic) (Max)	Mounting Type	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	Supplier Device Package
ON Semiconductor MJ11032G	50 A	Through Hole	2 mA	1000	120 V	3.5 V	-55 °C	200 C	300 W	TO-204	TO-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.