MJ11032 Series

50 A, 120 V NPN Darlington Bipolar Power Transistor

Catalog

50 A, 120 V NPN Darlington Bipolar Power Transistor

Part	Current - Collector (Ic) (Max)	Mounting Type	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	Supplier Device Package
ON Semiconductor MJ11032G	50 A	Through Hole	2 mA	1000	120 V	3.5 V	-55 °C	200 C	300 W	TO-204	TO-3

50 A, 120 V NPN Darlington Bipolar Power Transistor

• High DC Current Gain -hFE= 1000 (Min) @ IC= 25 AdchFE= 400 (Min) @ IC= 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built-In Base-Emitter Shunt Resistor

• Junction Temperature to +200°C

• Pb-Free Packages are Available

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.