JANTX1N3170R

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DIODE GEN PURP 600V 300A DO205AB

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 300A DO205AB

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX1N3170R

Current - Average Rectified (Io)	300 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Military
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-205AB, DO-9, Stud
Qualification	MIL-PRF-19500/586
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Qualification	Speed	Speed	Grade	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type
Microchip Technology JANTX1N3170R	600 V	300 A	10 µA	MIL-PRF-19500/586	Standard Recovery >500ns	200 mA	Military	DO-205AB DO-9 Stud	Reverse Polarity Standard	175 ░C	-65 C	Stud Mount
Microchip Technology 1N3170R	600 V	300 A	10 mA		Standard Recovery >500ns	200 mA		DO-205AB DO-9 Stud	Reverse Polarity Standard	200 C	-65 C	Stud Mount
Microchip Technology 1N3170	600 V	300 A	10 mA		Standard Recovery >500ns	200 mA		DO-205AB DO-9 Stud	Standard	200 C	-65 C	Stud Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 300A Stud Mount DO-205AB (DO-9)

Technical documentation and resources

No documents available