Specification	ECH8659-TL-W

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	11.8 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	SOT-28FL/ECH8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V

ECH8659 Series

Dual N-Channel Power MOSFET 30V, 7A, 24mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max [Max]
ON Semiconductor ECH8659-TL-W	7 A	MOSFET (Metal Oxide)	11.8 nC	SOT-28FL/ECH8	30 V	Surface Mount	2 N-Channel (Dual)	150 °C	2.6 V	710 pF	24 mOhm	4V Drive Logic Level Gate
ON Semiconductor ECH8659-M-TL-H	7 A	MOSFET (Metal Oxide)	11.8 nC	8-ECH	30 V	Surface Mount	2 N-Channel (Dual)	150 °C		710 pF	24 mOhm	4V Drive Logic Level Gate	1.5 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ECH8659 Series

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.