ECH8659 Series

Dual N-Channel Power MOSFET 30V, 7A, 24mΩ

Catalog

Dual N-Channel Power MOSFET 30V, 7A, 24mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max [Max]
ON Semiconductor ECH8659-TL-W	7 A	MOSFET (Metal Oxide)	11.8 nC	SOT-28FL/ECH8	30 V	Surface Mount	2 N-Channel (Dual)	150 °C	2.6 V	710 pF	24 mOhm	4V Drive Logic Level Gate
ON Semiconductor ECH8659-M-TL-H	7 A	MOSFET (Metal Oxide)	11.8 nC	8-ECH	30 V	Surface Mount	2 N-Channel (Dual)	150 °C		710 pF	24 mOhm	4V Drive Logic Level Gate	1.5 W

Catalog

Dual N-Channel Power MOSFET 30V, 7A, 24mΩ

Key Features

• RoHS compliance

• Low On-Resistance

• ESD Diode-Protected Gate

• 4.0V drive

• Composite type, Facilitating high-density mounting

Description

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.