Discrete Semiconductor Products

SI8806DB-T2-E1

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MOSFET N-CH 12V 4MICROFOOT

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Discrete Semiconductor Products

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MOSFET N-CH 12V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8806DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-XFBGA
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI8806DB-T2-E1	1.8 V 4.5 V	500 mW	Surface Mount	-55 °C	150 °C	8 V	1 V	N-Channel	MOSFET (Metal Oxide)	12 V	17 nC	43 mOhm	4-XFBGA	2.8 A	4-Microfoot

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 12 V 2.8A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

Technical documentation and resources