SI8806 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 12V 4MICROFOOT
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Technology | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.8 V 4.5 V | 500 mW | Surface Mount | -55 °C | 150 °C | 8 V | 1 V | N-Channel | MOSFET (Metal Oxide) | 12 V | 17 nC | 43 mOhm | 4-XFBGA | 2.8 A | 4-Microfoot |