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FDMC86340
Discrete Semiconductor Products

FDMC2D8N025S

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET<SUP>TM</SUP> 25V, 124A, 1.9MΩ

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FDMC86340
Discrete Semiconductor Products

FDMC2D8N025S

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET<SUP>TM</SUP> 25V, 124A, 1.9MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC2D8N025S
Current - Continuous Drain (Id) @ 25°C124 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]63 nC
Input Capacitance (Ciss) (Max) @ Vds4615 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)47 W
Rds On (Max) @ Id, Vgs1.9 mOhm
Supplier Device PackagePower33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.92
10$ 1.22
100$ 0.83
500$ 0.66
1000$ 0.60
Digi-Reel® 1$ 1.98
10$ 1.26
100$ 0.85
500$ 0.68
1000$ 0.62

Description

General part information

FDMC2D8N025S Series

The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.