Discrete Semiconductor Products
SCT2H12NWBTL1
ActiveRohm Semiconductor
1700V, 3.9A, 7-PIN SMD, SILICON-CARBIDE (SIC) MOSFET
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Discrete Semiconductor Products
SCT2H12NWBTL1
ActiveRohm Semiconductor
1700V, 3.9A, 7-PIN SMD, SILICON-CARBIDE (SIC) MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2H12NWBTL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.9 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 197 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-263CA, D2PAK (7 Leads + Tab), TO-263-8 |
| Power Dissipation (Max) [Max] | 39 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | TO-263CA-7LSHYAD |
| Vgs (Max) [Max] | 22 V, -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 5.58 | |
Description
General part information
SCT2H12NWB Series
SCT2H12NWB is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources