Specification	NVMTS1D1N04CTXG

Current - Continuous Drain (Id) @ 25°C	277 A, 48.8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	4.7 W, 153 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.1 mOhm
Supplier Device Package	8-DFNW
Supplier Device Package [x]	8.3
Supplier Device Package [y]	8.4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVMTS1D1N04C Series

Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel

Part	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Drive Voltage (Max Rds On, Min Rds On)	Qualification	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Grade	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVMTS1D1N04CTXG	8-PowerTDFN	20 V	40 V	Surface Mount	48.8 A 277 A	4 V	8.3	8-DFNW	8.4	10 V	AEC-Q101	N-Channel	86 nC	1.1 mOhm	-55 °C	175 ░C	4.7 W 153 W	MOSFET (Metal Oxide)	Automotive	5410 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Product Preview Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel

Technical documentation and resources