Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel
Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel
| Part | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Drive Voltage (Max Rds On, Min Rds On) | Qualification | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Technology | Grade | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 8-PowerTDFN | 20 V | 40 V | Surface Mount | 48.8 A 277 A | 4 V | 8.3 | 8-DFNW | 8.4 | 10 V | AEC-Q101 | N-Channel | 86 nC | 1.1 mOhm | -55 °C | 175 ░C | 4.7 W 153 W | MOSFET (Metal Oxide) | Automotive | 5410 pF |